Opportunities · Part-time opportunity
SiGe HBT Device Modelling Intern - Summer 2027
GlobalFoundries · Essex Junction, VT
Applies on Workday≈$10-$44/hr
Dates for this one
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Posted
Aug 26, 2026
What matters in this listing
What you'll own
- Analyze measurement data for DC and RF characteristics.
- Develop HiCUM L2 V3.0 based compact model for HBT device.
- Develop a procedure to incorporate new physical effects in the compact model and propose new models/modeling methods if applicable.
Requirements and eligibility
- Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation.
- Required Qualifications:
- At least a second-year graduate student at time of application and actively pursuing a Master’s, or PhD in Electrical Engineering, Microelectronics or related field through an accredited degree program during the time of internship.
- Must have at least an overall 3.5 GPA and be in good academic standing.
Preferred, not required
- Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
- Familiarity with industry standard compact model: High Current Model (HiCUM)
- Familiarity with design simulation tools such as Cadence Spectre or Keysight ADS
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