Opportunities · Part-time opportunity

Technology Development Intern, RF GaN (Summer 2027)

GlobalFoundries · Essex Junction, VT

Applies on Workday≈$10-$35/hr

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Role overview

Collaborate with the various device, process integration, and program management teams in our technology development team to organize, run, and analyze experiments for the GaN technology as it is being developed to meet performance, reliability, yield, and cost objectives.
Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
Collaborate with various technical teams to ensure appropriate process module & integration, in-line process controls, and corresponding electrical tests are available for any new devices or concerns.
Collaborate with teams on physical and electrical device simulation and final characterization analysis to meet best in class device performance.

Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation.
Required Qualifications
Actively pursuing a Masters or Ph.
in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship.

Prior related internship or co-op experience
Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
Strong written and verbal communication skills

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Posted

Sep 28, 2026

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